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<<<<4H-SiC Power MOSFET blocking 1200V>>>>

I plead almost total ignorance as to SC materials physics. Do I correctly understand the implication of the meaning of "temperature coefficient is negative" to be that as the device gets hotter, it becomes a better conductor [i.e. has less resistance]? The On-Resistance Vs.Temp curves that support that comment show reistance falling as temperature rises.
Thus the hotter it gets, the more efficient it is as a conductor.
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